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Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy

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Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy

Auteurs : RBID : Pascal:02-0319276

Descripteurs français

Pascal (Inist)
- 7361E, 6172V, 7350D, 7350J, Etude expérimentale, Semiconducteur III-V, Indium composé, Couche épitaxique semiconductrice, Dopage semiconducteur, Mobilité porteur charge, Densité porteur charge, Diffraction RX, Effet Hall, Résistivité électrique.

English descriptors

KwdEn :
- Carrier density, Carrier mobility, Electric resistivity, Experimental study, Hall effect, III-V semiconductors, Indium compounds, Semiconductor doping, Semiconductor epitaxial layers, XRD.

Abstract

We report on the electrical characteristics of InSb and n-type doping of InSb layers grown on GaAs substrates using a SnTe captive source by molecular beam epitaxy (MBE). The undoped epilayers are n-type in the temperature range of 10 to 300 K investigated. Doped layer with carrier concentrations ranging from 2×10¹⁶/cm³ to 3.2×10¹⁸/cm³ with corresponding x-ray full width at half maxima varying from 170-200 arcsec have been achieved. High carrier mobility of 94098 cm²/Vs on lightly doped samples has been achieved. These results suggest SnTe source as being one of the donor dopants of choice for MBE grown InSb epilayers. Temperature and magnetic field dependent Hall and resistivity measurements with various multicarrier conduction analysis techniques indicate three conduction channels for undoped InSb and two conduction channels for doped InSb. They have been used successfully to explain the temperature and thickness dependence of the electrical properties of MBE grown undoped and doped InSb epilayers. © 2002 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Rawdanowicz, T A" uniqKey="Rawdanowicz T">T. A. Rawdanowicz</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411</s1>
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<wicri:cityArea>Department of Electrical Engineering, North Carolina A&T State University, Greensboro</wicri:cityArea>
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<author><name sortKey="Iyer, S" uniqKey="Iyer S">S. Iyer</name>
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<author><name sortKey="Mitchel, W C" uniqKey="Mitchel W">W. C. Mitchel</name>
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<author><name sortKey="Saxler, A" uniqKey="Saxler A">A. Saxler</name>
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<author><name sortKey="Elhamri, S" uniqKey="Elhamri S">S. Elhamri</name>
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<term>Hall effect</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
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<term>Semiconductor epitaxial layers</term>
<term>XRD</term>
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<term>7350J</term>
<term>Etude expérimentale</term>
<term>Semiconducteur III-V</term>
<term>Indium composé</term>
<term>Couche épitaxique semiconductrice</term>
<term>Dopage semiconducteur</term>
<term>Mobilité porteur charge</term>
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<front><div type="abstract" xml:lang="en">We report on the electrical characteristics of InSb and n-type doping of InSb layers grown on GaAs substrates using a SnTe captive source by molecular beam epitaxy (MBE). The undoped epilayers are n-type in the temperature range of 10 to 300 K investigated. Doped layer with carrier concentrations ranging from 2×10<sup>16</sup>
/cm<sup>3</sup>
 to 3.2×10<sup>18</sup>
/cm<sup>3</sup>
 with corresponding x-ray full width at half maxima varying from 170-200 arcsec have been achieved. High carrier mobility of 94098 cm<sup>2</sup>
/Vs on lightly doped samples has been achieved. These results suggest SnTe source as being one of the donor dopants of choice for MBE grown InSb epilayers. Temperature and magnetic field dependent Hall and resistivity measurements with various multicarrier conduction analysis techniques indicate three conduction channels for undoped InSb and two conduction channels for doped InSb. They have been used successfully to explain the temperature and thickness dependence of the electrical properties of MBE grown undoped and doped InSb epilayers. © 2002 American Institute of Physics.</div>
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/cm<sup>3</sup>
 to 3.2×10<sup>18</sup>
/cm<sup>3</sup>
 with corresponding x-ray full width at half maxima varying from 170-200 arcsec have been achieved. High carrier mobility of 94098 cm<sup>2</sup>
/Vs on lightly doped samples has been achieved. These results suggest SnTe source as being one of the donor dopants of choice for MBE grown InSb epilayers. Temperature and magnetic field dependent Hall and resistivity measurements with various multicarrier conduction analysis techniques indicate three conduction channels for undoped InSb and two conduction channels for doped InSb. They have been used successfully to explain the temperature and thickness dependence of the electrical properties of MBE grown undoped and doped InSb epilayers. © 2002 American Institute of Physics.</s0>
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Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy

Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy

Descripteurs français

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Abstract

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